Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-15
2006-08-15
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S637000, C438S675000
Reexamination Certificate
active
07091122
ABSTRACT:
Disclosed is a semiconductor device comprising a substrate, a first region provided on the substrate and comprising a first insulating portion which includes an insulating film having a relative dielectric constant of at most 3.0 and a conductive portion which is provided in the first insulating portion, a second region provided on the substrate, located adjacent to the first region in a direction parallel to a major surface of the substrate and comprising a second insulating portion which is located adjacent to the first insulating portion in the direction and which includes no insulating film having a relative dielectric constant of at most 3.0, and a pad provided on the second region and electrically connected to the conductive portion.
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Decision of Rejection from Japanese Patent Office dated Jan. 4, 2005. and the English translation thereof.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Picardat Kevin M.
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