Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2006-12-12
2006-12-12
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S590000, C438S795000, C438S933000
Reexamination Certificate
active
07148130
ABSTRACT:
A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insulating film, and a sidewall insulating film formed on a sidewall surface of the gate electrode, wherein the gate electrode is made of SiGe, the sidewall insulating film is an insulating film obtained by oxidizing the sidewall surface of the gate electrode, and the sidewall insulating film contains silicon oxide as a main component.
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Notification of Reasons for Rejection mailed Mar. 28, 2006, issued by the Japanese Patent Office in counterpart Japanese Application No. 2002-330399 and English translation thereof.
Dang Trung
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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