Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-12

2006-12-12

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C257S762000

Reexamination Certificate

active

07148571

ABSTRACT:
Provided is a semiconductor device comprising: an HSQ layer formed on a Cu wiring line and having properties that Cu is unlikely to enter the HSQ layer; a plug formed in the HSQ layer and connected to the Cu wiring line; and a Cu wiring line inserted inside the HSQ layer and connected to the plug. A W layer which allows the plug and the HSQ layer to adhere to each other is formed between the plug and the HSQ layer, and another W layer which allows the Cu wiring line and the HSQ layer to adhere to each other and which is formed of tungsten is formed between the Cu wiring line and the HSQ layer.

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Japanese Office Action dated Feb. 26, 2002, with partial translation.
Korean Office Action dated May 17, 2002, with partial Japanese and English translation.

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