Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-02-21
2006-02-21
Wille, Douglas (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S486000, C438S487000
Reexamination Certificate
active
07001829
ABSTRACT:
In a method of manufacturing a semiconductor device, a laser beam capable of irradiating a large area in one shot is irradiated to an amorphous silicon film into which a catalytic element is intentionally introduced to crystallize the amorphous silicon film, thus obtaining a crystalline silicon film.
REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5533040 (1996-07-01), Zhang
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5783468 (1998-07-01), Zhang et al.
patent: 5830784 (1998-11-01), Zhang et al.
patent: 5869803 (1999-02-01), Noguchi et al.
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 6071765 (2000-06-01), Noguchi et al.
patent: 6482687 (2002-11-01), Teramoto et al.
patent: 6495404 (2002-12-01), Teramoto et al.
patent: 6753213 (2004-06-01), Teramoto et al.
patent: 06-132219 (1994-05-01), None
patent: 07-135318 (1995-05-01), None
patent: 07-235490 (1995-09-01), None
patent: 07-307286 (1995-11-01), None
patent: 09-312260 (1997-12-01), None
patent: 10-270363 (1998-10-01), None
Wolf, S.; Tauber, R.N..Silicon Processing for the VLSI Era, vol. 1—Process Technology. Lattice Press, 1986. Pp. 63-70.
Peralta Ginette
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Wille Douglas
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