Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-11-28

2006-11-28

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S300000

Reexamination Certificate

active

07141458

ABSTRACT:
A method of manufacturing a semiconductor device includes a step of forming a device region5that is separated by a device-separation insulating film4formed in a part of an SOI layer, a step of forming a gate insulating film6aon a device region5so that the device region5can be exposed on both sides of the gate insulating film6a, a step of forming a gate electrode7awith polysilicon on the gate insulating film6a, a step of adjusting the area of exposed silicon so that the area of exposed silicon can be a prescribed area by forming at least either a pseudo region5bor a pseudo electrode7bto control the growth rate in growing an epitaxial layer9, and a step of conducting low-temperature epitaxial growth of silicon.

REFERENCES:
patent: 6074938 (2000-06-01), Asamura
patent: 6621123 (2003-09-01), Nakabayashi et al.
patent: 2000/150806 (2000-05-01), None
R. Chau et al. “A 50 nm Depleted-Substrate CMOS Transistor (DST),” IDEM 2001, pp. 621-624.

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