Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-22

2006-08-22

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S162000, C438S528000

Reexamination Certificate

active

07094663

ABSTRACT:
The semiconductor device has a low-resistance layer provided under the interconnection extending from the signal input to a gate of MOSFET. The low-resistance layer decreases the substrate resistance and the noise characteristic of the semiconductor device can also be improved. The low-resistance layer can be provided on a surface of the substrate or a polysilicon interconnection.

REFERENCES:
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5528065 (1996-06-01), Battersby et al.
patent: 5554873 (1996-09-01), Erdeljac et al.
patent: 5696403 (1997-12-01), Rostoker et al.
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5744840 (1998-04-01), Ng
patent: 5854504 (1998-12-01), Consiglio
patent: 5898206 (1999-04-01), Yamamoto
patent: 5917223 (1999-06-01), Ohuchi et al.
patent: 5932917 (1999-08-01), Miura
patent: 5939753 (1999-08-01), Ma et al.
patent: 5990504 (1999-11-01), Morifuji
patent: 6071763 (2000-06-01), Lee
patent: 6118154 (2000-09-01), Yamaguchi et al.
patent: 6157065 (2000-12-01), Huang et al.
patent: 6163056 (2000-12-01), Maekawa
patent: 6472723 (2002-10-01), Jarstad et al.
patent: 63-278273 (1988-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3651758