Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-06-06

2006-06-06

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257S750000, C257S751000, C257S760000, C257S762000, C257S759000, C257S639000, C257S640000, C438S639000, C438S640000

Reexamination Certificate

active

07057286

ABSTRACT:
A method for manufacturing a multi-level interconnection structure in a semiconductor device includes the steps of consecutively forming an anti-diffusion film and an interlevel dielectric film on a first level Cu layer, forming first through third hard mask films on the interlevel dielectric film, etching the interlevel dielectric film by using the first hard mask to form first through-holes, etching the first and second hard mask films and a top portion of the interlevel dielectric film by using the third hard mask film to form trenches, and etching the anti-diffusion film to form through-holes. The first hard mask film protects the interlevel dielectric film during removal of the second and third hard mask films.

REFERENCES:
patent: 6140226 (2000-10-01), Grill et al.
patent: 6225207 (2001-05-01), Parikh
patent: 6514852 (2003-02-01), Usami

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3634198