Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1998-11-16
1999-11-23
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438682, 438683, H01L 213205, H01L 214763, H01L 2144
Patent
active
059899883
ABSTRACT:
A silicon region partitioned by insulating films is formed on a main surface of a substrate. A mixed film of first and second metals is formed directly or indirectly on the substrate having the silicon region formed thereon. Then, a heat treatment is applied to permit the first and second metals to react with silicon in the silicon region so as to form selectively a first silicide film on the surface of the silicon region. Further, the first silicide film is subjected to a heat treatment under a nitriding atmosphere so as to form a second silicide film consisting essentially of the first metal and silicon on the surface of the silicon region and a nitride film consisting essentially of the second metal and nitrogen on the surface of the second silicide film or both on the surface and at the crystal grain boundary of the second silicide film.
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Iinuma Toshihiko
Nadahara Soichi
Suguro Kyoichi
Kabushiki Kaisha Toshiba
Lindsay Jr. Walter L.
Niebling John F.
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