Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-03-21
2006-03-21
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S482000, C438S486000, C438S488000
Reexamination Certificate
active
07015121
ABSTRACT:
A method of manufacturing a semiconductor device comprises a step of depositing a crystalline insulating layer oriented in a predetermined crystal face orientation by epitaxial growth on an amorphous semiconductor layer, a step of depositing a second amorphous semiconductor layer on the crystalline insulating layer, a step of growing said first and second semiconductor layers into a polycrystal or single crystal layer in a solid phase, using said crystalline insulating film as core, and a step of forming a functional element containing said first and second semiconductor layer.
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Mitani Yuichiro
Nishikawa Yukie
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Quach T. N.
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