Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer

Reexamination Certificate

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C438S482000, C438S486000, C438S488000

Reexamination Certificate

active

07015121

ABSTRACT:
A method of manufacturing a semiconductor device comprises a step of depositing a crystalline insulating layer oriented in a predetermined crystal face orientation by epitaxial growth on an amorphous semiconductor layer, a step of depositing a second amorphous semiconductor layer on the crystalline insulating layer, a step of growing said first and second semiconductor layers into a polycrystal or single crystal layer in a solid phase, using said crystalline insulating film as core, and a step of forming a functional element containing said first and second semiconductor layer.

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C.G. Kim, et al.,Jpn. J. Appl. Phys., vol. 40, Pt. 1, No. 8, pp. 4769-4773 (2001).

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