Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-05-16

2006-05-16

Wilson, Christian D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S331000, C257S332000, C257S410000

Reexamination Certificate

active

07045858

ABSTRACT:
There is provided a semiconductor device comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, the second conductivity type being different from the first conductivity type, a third semiconductor layer of the first conductivity type selectively formed on the second semiconductor layer, a trench formed through the third semiconductor layer and the second semiconductor layer to reach the first semiconductor layer, a gate dielectric film formed along side and bottom surfaces of the trench, and a gate electrode formed to be in contact with the gate dielectric film at the side surfaces of the trench, surfaces of the gate electrode that are opposite to the surfaces contacting the gate dielectric film, and the gate dielectric film at a bottom of the trench forming a hollow portion extending from the bottom to an opening side of the trench.

REFERENCES:
patent: 5561308 (1996-10-01), Kamata et al.
patent: 5937296 (1999-08-01), Arnold
patent: 6127712 (2000-10-01), Wu
patent: 6362025 (2002-03-01), Patti et al.
patent: 7-50411 (1995-02-01), None
patent: 2001-345446 (2001-12-01), None

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