Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-03

2006-01-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S296000, C438S003000, C438S244000

Reexamination Certificate

active

06982455

ABSTRACT:
A semiconductor device has a ferroelectric capacitor. The semiconductor device includes an interlayer insulating layer, a ferroelectric capacitor and an insulating side wall film. The interlayer insulating layer is formed on a substrate including an integrated circuit and has a contact hole exposing a part of the integrated circuit. The ferroelectric capacitor is formed by depositing a first electrode layer, a ferroelectric layer and a second electrode layer on the interlayer insulating layer in this order. The insulating side wall film covers a peripheral edge section of the ferroelectric capacitor and is spaced from a peripheral edge section of the contact hole. A wiring layer electrically connects the second electrode layer to the integrated circuit through the contact hole.

REFERENCES:
patent: 6249014 (2001-06-01), Bailey
patent: 6365927 (2002-04-01), Cuchiaro et al.
patent: 6392265 (2002-05-01), Kondo et al.
patent: 6440815 (2002-08-01), Mitsuhashi
patent: 6521927 (2003-02-01), Hidaka et al.
patent: 6730948 (2004-05-01), Umeda et al.
patent: 9-121023 (1997-05-01), None
patent: 11-17124 (1999-01-01), None
patent: 2000-114489 (2000-04-01), None
patent: 2002-353414 (2002-12-01), None
patent: 2003-86776 (2003-03-01), None
Tadashi Shiosaki et al., [ ] “Towards the pratical use of the FeRAM merged LSI”pp. 244-246 (Ferroelectric Advanced Process) with an English translation.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3599534