Semiconductor device and method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

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C257S784000, C257S786000, C438S612000, C438S614000

Reexamination Certificate

active

07009306

ABSTRACT:
The semiconductor device includes a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes; a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed; a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section; an interconnect formed over the first resin section and one of the electrodes; and a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections.

REFERENCES:
patent: 5525546 (1996-06-01), Harada et al.
patent: 5793117 (1998-08-01), Shimada et al.
patent: 5925931 (1999-07-01), Yamamoto
patent: 6707153 (2004-03-01), Kuwabara et al.
patent: 2003/0141603 (2003-07-01), Hashimoto
patent: 2003-023009 (2003-01-01), None
U.S. Appl. No. 09/700,464, filed Nov. 15, 2000, Terunao Hanaoka et al.

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