Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2006-03-07
2006-03-07
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S784000, C257S786000, C438S612000, C438S614000
Reexamination Certificate
active
07009306
ABSTRACT:
The semiconductor device includes a semiconductor substrate in which is formed an integrated circuit, the semiconductor substrate having electrodes; a first resin section formed in a central portion of a surface of the semiconductor substrate on which the electrodes are formed; a plurality of second resin sections formed on the surface of the semiconductor substrate on which the electrodes are formed, in a region closer to an edge portion of the semiconductor substrate than the first resin section; an interconnect formed over the first resin section and one of the electrodes; and a resin layer formed to cover the interconnect and extend from the first resin section to outer sides of the second resin sections.
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patent: 5925931 (1999-07-01), Yamamoto
patent: 6707153 (2004-03-01), Kuwabara et al.
patent: 2003/0141603 (2003-07-01), Hashimoto
patent: 2003-023009 (2003-01-01), None
U.S. Appl. No. 09/700,464, filed Nov. 15, 2000, Terunao Hanaoka et al.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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