Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2006-05-16
2006-05-16
Lebentritt, Michael (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S072000, C257S075000, C438S162000, C438S161000
Reexamination Certificate
active
07045818
ABSTRACT:
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020atoms/cm3at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
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Hirai Kyoko
Jinno Yushi
Morimoto Yoshihiro
Nakanishi Shiro
Yamada Tsutomu
Hogan & Hartson L.L.P.
Lebentritt Michael
Pompey Ron
Sanyo Electric Co,. Ltd.
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