Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-09-19
2006-09-19
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S938000, C257SE29193
Reexamination Certificate
active
07109096
ABSTRACT:
A method of manufacturing a semiconductor device including: providing a substrate having an insulating layer and a single crystal silicon layer formed on the insulating layer; forming a strain-inducing semiconductor layer on the single crystal silicon layer, the strain-inducing semiconductor having the lattice constant differing from the lattice constant of the single crystal silicon layer; changing the single crystal silicon layer into a strained silicon layer by matching a lattice of the single crystal silicon layer with a lattice of the strain-inducing semiconductor layer; and removing the strain-inducing semiconductor layer.
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Dolan Jennifer M.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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