Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-09-19

2006-09-19

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S517000, C438S149000, C438S778000, C438S787000, C438S791000, C257SE21212

Reexamination Certificate

active

07109103

ABSTRACT:
A semiconductor device including a silicon substrate, a gate insulator film formed on the silicon substrate and including silicon, deuterium, and at least one of oxygen and nitrogen, and a gate electrode formed on the gate insulator film wherein a deuterium concentration in a vicinity of an interface of the gate insulator film with the gate electrode is at least 1×1017cm−3, and a deuterium concentration in a vicinity of an interface of the gate insulator film with the silicon substrate is higher than the deuterium concentration in the vicinity of the interface of the gate insulation film with the gate electrode.

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Ghandhi, Sorab K., VLSI Fabrication Principles: Silicon and Gallium Arsenide, 1983, John Wiley & Sons, pp. 377-381.
J.W. Lyding and K. Hess, I.C. Kizilyalli, Reduction of Hot Electron Degradation in Metal Oxide Semiconductor Transistors by Deuterium Processing, Applied Physics Letters, vol. 68, No. 18, Apr. 29, 1996, pp. 2526-2528.
Hyojune Kim and Hyunsang Hwang, High-Quality Ultrathin Gate Oxide Prepared by Oxidation in D20, Applied Physics Letters, vol. 74, No. 5, Feb. 1, 1999, pp. 709-710.

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