Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-03-14

2006-03-14

Eckert, George (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000, C257S773000, C257S774000

Reexamination Certificate

active

07012023

ABSTRACT:
The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

REFERENCES:
patent: 5169680 (1992-12-01), Ting et al.
patent: 5380679 (1995-01-01), Kano
patent: 5666007 (1997-09-01), Chung
patent: 5783485 (1998-07-01), Ong et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5915756 (1999-06-01), Wright
patent: 6030896 (2000-02-01), Brown
patent: 6063703 (2000-05-01), Shinriki et al.
patent: 6184124 (2001-02-01), Hasegawa et al.
patent: 6215189 (2001-04-01), Toyoda et al.
patent: 6265301 (2001-07-01), Lee et al.
patent: 6890849 (2005-05-01), Kado et al.
patent: 2002/0068427 (2002-06-01), Guo et al.
patent: 2003/0038372 (2003-02-01), Sasaki et al.
patent: 2003/0096498 (2003-05-01), Chopra et al.
patent: 08213391 (1996-08-01), None
patent: 08-339973 (1996-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3557996