Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-31

2006-01-31

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S655000, C438S656000, C438S675000, C438S687000

Reexamination Certificate

active

06992005

ABSTRACT:
A semiconductor device having a multi-layered wiring structure containing a copper layer, comprises a first insulating film formed over a semiconductor substrate, a first copper pattern buried in the first insulating film, a cap layer formed on the first copper pattern and the first insulating film and made of a substance a portion of which formed on the first copper pattern has a smaller electrical resistance value than a portion formed on the first insulating film, second insulating films formed on the cap layer, and a second copper pattern buried in a hole or a trench, which is formed in the second insulating films on the first copper pattern; and connected electrically to the first copper pattern via the cap layer.

REFERENCES:
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patent: 5470789 (1995-11-01), Misawa
patent: 5693563 (1997-12-01), Teong
patent: 6339025 (2002-01-01), Liu et al.
patent: 6342444 (2002-01-01), Higashi et al.
patent: 6355559 (2002-03-01), Havemann et al.
patent: 2004/0021226 (2004-02-01), Geffken et al.
patent: 1 083 596 (2001-03-01), None
patent: 5-129224 (1993-05-01), None

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