Semiconductor device and method of manufacturing the same,...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S107000

Reexamination Certificate

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07074703

ABSTRACT:
A method of manufacturing a semiconductor device includes: (a) forming a first resin layer on a first surface of a semiconductor substrate, an integrated circuit being formed in the first surface of the semiconductor substrate; (b) forming a through-hole electrode including a projecting section which projects from a second surface opposite to the first surface by removing a part of the semiconductor substrate from the second surface so as to thin the semiconductor substrate; and (c) forming a second resin layer on the second surface of the semiconductor substrate so as to avoid the projecting section.

REFERENCES:
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6657306 (2003-12-01), Sasaki et al.
patent: 6734084 (2004-05-01), Nemoto et al.
patent: 6809421 (2004-10-01), Hayasaka et al.
patent: 2005/0017338 (2005-01-01), Fukazawa
patent: A 2001-127242 (2001-05-01), None

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