Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2005-06-21
2005-06-21
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S680000, C257S685000, C257S686000, C257S753000, C257S783000
Reexamination Certificate
active
06909178
ABSTRACT:
As conductive patterns11A to11D are formed burying in a insulating resin10and a conductive foil20is formed being half-etched, thickness of the device is made thin. As an electrode for radiation11D is provided, a semiconductor device superior in radiation is provided.
REFERENCES:
patent: 6020629 (2000-02-01), Farnworth et al.
Igarashi Yusuke
Kobayashi Yoshiyuki
Maehara Eiju
Nakamura Takeshi
Okada Yukio
Nelms David
Sanyo Electric Co,. Ltd.
Tran Mai-Huong
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