Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257S382000, C257S900000, C365S149000, 43, C438S243000

Reexamination Certificate

active

06974996

ABSTRACT:
In a semiconductor device having a trench-gate structure in which polysilicon doped with boron is embedded in a trench, insulating film formed on the inner wall of the trench comprises ONO film, and silicon nitride film constituting the ONO film is formed to such film thickness and film quality that boron can be suppressed from passing through the silicon nitride film. Silicon oxide film is formed so that a top oxide film is thin and a bottom oxide film is thick.

REFERENCES:
patent: 4785337 (1988-11-01), Kenney
patent: 4833094 (1989-05-01), Kenney
patent: 5321289 (1994-06-01), Baba et al.
patent: 5972800 (1999-10-01), Hasegawa
patent: 6037651 (2000-03-01), Hasegawa
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6624044 (2003-09-01), Ito et al.
patent: 6784471 (2004-08-01), Nakabayashi
patent: 2002/0167046 (2002-11-01), Aoki et al.
patent: A-2000-196074 (2000-07-01), None
patent: A-2003-224274 (2003-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3512774