Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Baumeister, B. William (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S370000, C257S378000
Reexamination Certificate
active
06930359
ABSTRACT:
In a semiconductor device having a semiconductor element having a plurality of SOI-Si layers, the height of element isolation regions from the surface of the semiconductor substrate are substantially equal to each other. Alternatively, the element isolation regions are formed at the equal height on the semiconductor substrate and then a plurality of SOI-Si layers appropriately different in thickness are formed. In this manner, it is possible to obtain element isolation regions having substantially the same height from the semiconductor substrate and desired element regions having SOI-Si layers different in height. The thickness of a single crystalline silicon film (SOI-Si layer) may be appropriately changed by another method which includes depositing an amorphous silicon film and applying a heat processing to form an epi layer, and removing an unnecessary portion.
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Chinese Patent Office Action dated Oct. 10, 2003, and English translation thereof.
Baumeister B. William
Kabushiki Kaisha Toshiba
Menz Douglas
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