Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-01-11

2005-01-11

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S622000, C257S774000, C257S775000, C438S637000, C438S638000, C438S639000

Reexamination Certificate

active

06841469

ABSTRACT:
A semiconductor device comprises a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.

REFERENCES:
patent: 5960313 (1999-09-01), Jun
patent: 6087719 (2000-07-01), Tsunashima
patent: 6239495 (2001-05-01), Sakui et al.
patent: 6365504 (2002-04-01), Chien et al.
patent: 6391706 (2002-05-01), Wu et al.
patent: 6534370 (2003-03-01), Park
patent: 6677235 (2004-01-01), Yegnashankaran et al.
patent: 6750142 (2004-06-01), Hieda

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