Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-03-15

2005-03-15

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S164000

Reexamination Certificate

active

06867077

ABSTRACT:
A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

REFERENCES:
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 6743700 (2004-06-01), Asami et al.
patent: 07-161634 (1995-06-01), None
patent: 10-022289 (1998-01-01), None

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