Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-01-18

2005-01-18

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S060000, C257S538000

Reexamination Certificate

active

06844599

ABSTRACT:
A semiconductor device has thin film resistors connected in series to form a bleeder resistance circuit. Each of the thin film resistors is made of a polysilicon film doped with B or BF2P-type impurities and has two end portions each having a high impurity concentration region. A first insulating film overlies the thin film resistors. First conductors are connected to the ends of the thin film resistors for connecting the thin film resistors in series. The semiconductor device has second conductors each connected to a respective one of the first conductors and overlying a respective one of the thin film resistors through the first insulating film.

REFERENCES:
patent: 5296726 (1994-03-01), MacElwee
patent: 5708284 (1998-01-01), Onishi
patent: 6369409 (2002-04-01), Takasu et al.
patent: 6372585 (2002-04-01), Yu

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