Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S357000, C257S503000, C257S401000
Reexamination Certificate
active
06873014
ABSTRACT:
The semiconductor device has a low-resistance layer provided under the interconnection extending from the singal input to a gate of MOSFET. The low-resistance layer suppresses the influence of the substrate resistance and the noise characteristic of the semiconductor device can also be improved. The low-resistance layer can be provided on a surface of the substrate or a polysilicon interconnection.
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Kabushiki Kaisha Toshiba
Lee Eugene
Pillsbury & Winthrop LLP
Thomas Tom
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