Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-07-26

2005-07-26

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

06921718

ABSTRACT:
A semiconductor device includes a semiconductor substrate and an electrode disposed on a major surface of the semiconductor substrate. A via hole is formed on a center of the electrode so as to open from a surface of the electrode to a place under the surface of the semiconductor substrate. A via-hole foundation electrode for inhibiting diffusion from a metal layer is formed inside the via hole and on the surface of the electrode, a via-hole electrode is formed on the surface of the via-hole foundation electrode. A back via hole is formed on the back of the semiconductor substrate opposite to the major surface thereof, and opened from the back of the semiconductor substrate to the via-hole electrode. A back via-hole electrode is formed on the back of the semiconductor substrate including the inside of the back via hole.

REFERENCES:
patent: 6225651 (2001-05-01), Billon
patent: 6284644 (2001-09-01), Aug et al.
patent: 10-64923 (1998-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3386185