Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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C438S197000, C257S296000

Reexamination Certificate

active

06844247

ABSTRACT:
A semiconductor device Having: a semiconductor substrate; a first gate electrode constructed of a multi-layered stack member provided in a memory region, formed with memory cells, so that the first gate electrode is insulated by a first insulating layer from the semiconductor substrate; and a second gate electrode provided in a logic region, formed with a logic circuit for controlling at least the memory cells, so that the second gate electrode is insulated by a second insulating layer from a semiconductor substrate, wherein said layer, brought into contact with the first insulating layer, of the first gate electrode and the layer, brought into contact with the second insulating layer, of the second gate electrode, are composed of materials different from each other, and a method for making the same.

REFERENCES:
patent: 5101247 (1992-03-01), Ozturk et al.
patent: 5514611 (1996-05-01), Kim et al.
patent: 6180499 (2001-01-01), Yu
patent: 6333223 (2001-12-01), Moriwaki et al.
patent: 6555879 (2003-04-01), Krivokapic et al.

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