Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-05-24

2005-05-24

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257S491000, C257S492000, C257S493000, C438S268000, C438S273000

Reexamination Certificate

active

06897525

ABSTRACT:
In order to improve the characteristics of the high breakdown voltage MOS, a semiconductor device of the present invention is characterized in that an LDMOS transistor, which comprises a source region4, a channel region8, and a drain region5, and a gate electrode7formed on the channel region8, and a drift region formed between the channel region8and the drain region5, wherein an N−-type low concentration layer22serving as the drift region is formed shallowly at least below the gate electrode7(first N−-type layer22A) but formed deeply in a neighborhood of the drain region5(second N−-type layer22B).

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