Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-07-17

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438149, 438151, 438153, 438154, 438162, 438166, 438471, 438473, H01L 2120

Patent

active

061566284

ABSTRACT:
In a method of manufacturing a semiconductor device, nickel elements 404 is held on a surface of an amorphous silicon film 403 in a contact manner, and then transformed into a crystalline silicon film 405 through a heat treatment. Thereafter a mask 406 is formed to conduct doping with phosphorus, In this process, a region 407 is doped with phosphorus. Then, the region 407 which has been doped with phosphorus is activated by the irradiation of a laser beam or an intense light. Then, a heat treatment is conducted on the layer again to getter nickel in the region 407. Subsequently, the region 407 into which nickel is concentrated is removed so nickel is gettered, to obtain a region 408 having still higher crystallinity.

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