Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-04-22

1999-07-27

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257750, 257752, 257758, 438622, 438625, H01L 2348, H01L 2352, H01L 2940

Patent

active

059295287

ABSTRACT:
The semiconductor of this invention is provided with a first inter-layer insulating film formed on the surface of a semiconductor substrate to a first film thickness; a plurality of first wiring patterns formed on the surface of the first inter-layer insulating film; a dummy pattern formed between the first wiring patterns and insulated electrically from the wiring patterns; a second inter-layer insulating film formed from the first inter-layer insulating film to a second film thickness so as to cover the surfaces of the first inter-layer insulating film, the first wiring patterns, the dummy pattern; and second wiring patterns formed on the surface of the second inter-layer insulating film and wherein the dummy pattern has no planar overlapped portion with respect to the second wiring patterns, that is, it is separated from the second wiring patterns in top view.

REFERENCES:
patent: 5659202 (1997-08-01), Ashida
patent: 5798298 (1998-08-01), Yang et al.

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