Patent
1987-06-29
1989-07-04
James, Andrew J.
357 65, 357 68, 357 70, H01L 2348
Patent
active
048455431
ABSTRACT:
A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.
REFERENCES:
patent: 1227174 (1917-05-01), Morris
patent: 2186394 (1940-01-01), Spitaler
patent: 3353073 (1967-11-01), Majima et al.
patent: 3397044 (1968-08-01), Bylund
patent: 3899723 (1975-08-01), Muhlhausser et al.
patent: 3951764 (1976-04-01), King
patent: 4082222 (1978-03-01), Schderner et al.
patent: 4171215 (1979-10-01), Dremann
patent: 4355082 (1982-10-01), Bischoff et al.
Aluminium-Taschenbuch, Aluminium-Verlag Dusseldorf, 1983, pp. 231-234, 939, 1000-1002.
"Corrosion Resistant Aluminum Above 200.degree. C.", by J. E. Draley and W. E. Ruther, Argonne National Labs Publication An-5430, Jul. 15, 1955.
Streetman, Ben G., Solid State Electronic Devices, Prentice Hall, 1980, pp. 368-371.
Kitamura Wahei
Mikino Hiroshi
Okikawa Susumu
Sakamoto Daiji
Suzuki Hiromichi
Crane Sara W.
Hitachi , Ltd.
James Andrew J.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-856470