Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-13

2008-05-13

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21179

Reexamination Certificate

active

07371672

ABSTRACT:
A method of manufacturing a semiconductor device includes removing a low-resistivity metal film, conductive layer, third insulating film and an upper part of the electrode layer in a gate electrode isolation region with a gate forming pattern serving as a mask, forming a protecting film so that the protecting film covers the low-resistivity metal film, conductive layer, third insulating film and upper surface of the electrode layer, removing the protecting film formed on the upper surface of the electrode layer located in the upper surface of the electrode layer in the gate electrode isolation region, removing the electrode layer in the gate electrode isolation region, and removing residue of the protecting film.

REFERENCES:
patent: 4490900 (1985-01-01), Chiu
patent: 4616402 (1986-10-01), Mori
patent: 2003-78047 (2003-03-01), None

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