Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-07-08
2008-07-08
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C257S510000, C257S698000
Reexamination Certificate
active
07397128
ABSTRACT:
Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
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Kameyama Koujiro
Kubo Hirotoshi
Matsumoto Shigehito
Shirahata Yukari
Umemoto Mitsuo
Fish & Richardson P.C.
Kanto Sanyo Semiconductors Co., Ltd.
Patton Paul E
Sanyo Electric Co,. Ltd.
Smith Zandra
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