Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-07-19

2011-07-19

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S506000, C257SE27103

Reexamination Certificate

active

07982257

ABSTRACT:
A semiconductor device according to an embodiment of the present invention has a bit line and a word line. The device includes a substrate which is provided with first trenches extending in a bit-line direction and has side surfaces forming sidewalls of the first trenches, the substrate being provided with bird's beaks at upper edges of the side surfaces, a first gate insulator formed on the substrate between the first trenches, a floating gate formed on the first gate insulator between the first trenches and located between second trenches extending in a word-line direction, the floating gate not being provided with bird's beaks at lower edges of side surfaces facing the first trenches, a second gate insulator formed on the floating gate between the second trenches, and a control gate formed on the second gate insulator between the second trenches.

REFERENCES:
patent: 5986302 (1999-11-01), Fukatsu et al.
patent: 6555427 (2003-04-01), Shimizu et al.
patent: 2005/0142765 (2005-06-01), Joo
patent: 6-177392 (1994-06-01), None
patent: 6-310731 (1994-11-01), None
patent: 7-249697 (1995-09-01), None
patent: 9-232454 (1997-09-01), None
H. Akahori, “Semiconductor Device and Method for Manufacturing the Same”, U.S. Appl. No. 12/179,700, filed Jul. 25, 2008.

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