Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-06-07

2011-06-07

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23191

Reexamination Certificate

active

07956467

ABSTRACT:
A method includes burying a conductive pattern in an insulating film made of SiOH, SiCOH or organic polymer, treating surfaces of the insulating film and the conductive pattern with plasma which includes a hydrocarbon gas as a treatment gas, and forming a diffusion barrier film, which is formed of an SiCH film, an SiCHN film, an SiCHO film or an SiCHON film, over the insulating film and the conductive pattern with performing a plasma CVD by adding an Si-containing gas to the treatment gas while increasing an addition amount gradually or in a step by step manner.

REFERENCES:
patent: 2004/0076767 (2004-04-01), Satoh et al.
patent: 2004/0115876 (2004-06-01), Goundar et al.
patent: 2002-203899 (2002-07-01), None

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