Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-04-19

2011-04-19

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S374000, C257S751000, C257S758000, C257SE23141, C257SE21575

Reexamination Certificate

active

07928476

ABSTRACT:
A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.

REFERENCES:
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patent: 2006/0003579 (2006-01-01), Sir
patent: 2007/0018329 (2007-01-01), Oh et al.
patent: 2007/0045851 (2007-03-01), Kitada et al.
patent: 2009/0096102 (2009-04-01), Gambino et al.
patent: 2009/0117731 (2009-05-01), Yu et al.
patent: 2010/0099254 (2010-04-01), Narushima et al.
patent: 2004-505447 (2004-02-01), None
patent: 2005-277390 (2005-10-01), None
patent: 2007-27769 (2007-02-01), None
patent: 2007-142236 (2007-06-01), None
patent: 2007-149813 (2007-06-01), None
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patent: 02/09173 (2002-01-01), None
Korean Office Action dated Sep. 20, 2010, issued in corresponding Korean Patent Application No. 10-2008-0120989.

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