Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29156
Reexamination Certificate
active
07911007
ABSTRACT:
A semiconductor device including a silicon substrate and a field effect transistor including a gate insulating film on the silicon substrate, a gate electrode on the gate insulating film, and source/drain regions formed in the substrate on opposite sides of the gate electrode, wherein the gate electrode includes a silicide layer containing an Ni3Si crystal phase, at least in a portion of the gate electrode, the portion including a lower surface thereof, and the transistor includes an adhesion layer containing a metal oxide component, between the gate insulating film and the gate electrode.
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Coleman W. David
McGinn IP Law Group PLLC
NEC Corporation
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