Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-04-12

2011-04-12

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S410000, C257SE29255

Reexamination Certificate

active

07923762

ABSTRACT:
Disclosed herein is a semiconductor device, including: an insulating film provided on a semiconductor substrate so as to have a trench pattern; a gate insulating film provided so as to cover an inner wall of the trench pattern; and a gate electrode formed so as to be filled in the trench pattern through the gate insulating film and so as to protrude more widely than the trench pattern on both sides of the trench pattern on the insulating film.

REFERENCES:
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6908801 (2005-06-01), Saito
Yagishita et al., High Performance Metal Gate MOSFETs Fabricated by CMP for 0.1 micron Regime, International Electron Devices Meeting 1998, Technical Digest pp. 785-788 (1988).

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