Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-06-28

2011-06-28

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE29257, C257SE29260, C257SE27091

Reexamination Certificate

active

07968939

ABSTRACT:
A gate trench13is formed in a semiconductor substrate10. The gate trench13is provided with a gate electrode16formed over a gate insulating film14. A portion of the gate electrode16protrudes from the semiconductor substrate10, and a sidewall24is formed over a side wall portion of the protruding portion. A body trench25is formed in alignment with an adjacent gate electrode16. A cobalt silicide film28is formed over a surface of the gate electrode16and over a surface of the body trench25. A plug34is formed using an SAC technique.

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