Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-07-26

2011-07-26

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S308000, C257S532000

Reexamination Certificate

active

07985997

ABSTRACT:
A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.

REFERENCES:
patent: 2003/0008512 (2003-01-01), Ali et al.
patent: 2005/0124114 (2005-06-01), Ichimura
patent: 2006/0258112 (2006-11-01), Takaishi
patent: 11-087650 (1999-03-01), None
patent: 2000-196039 (2000-07-01), None
patent: 10-0388206 (2003-06-01), None
Korean Patent Office issued a Korean Office Action dated Mar. 29, 2010, Application No. 10-2008-0046688.
Chinese Patent Office a Chinese Office Action dated Aug. 21, 2009, Application No. 200810108448.

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