Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-08-09

2011-08-09

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257SE21403, C257SE21409

Reexamination Certificate

active

07994538

ABSTRACT:
A semiconductor device to which a stress technique is applied and in which a leakage current caused by silicidation can be suppressed. A gate electrode is formed over an element region defined by an isolation region formed in a semiconductor substrate with a gate insulating film between. Extension regions and source/drain regions are formed in the element region on both sides of the gate electrode. In addition, a semiconductor layer which differs from the semiconductor substrate in lattice constant is formed apart from at least part of the isolation region. By doing so, the formation of a spike near the isolation region is suppressed even if a silicide layer is formed. Accordingly, a leakage current caused by such a spike can be suppressed.

REFERENCES:
patent: 2006/0138398 (2006-06-01), Shimamune et al.
patent: 2007/0264810 (2007-11-01), Kim et al.
patent: 2004-039831 (2004-02-01), None
patent: 2006-186240 (2006-07-01), None
patent: 10-0722939 (2007-05-01), None
Chinese Office Action dated Dec. 11, 2009, issued in corresponding Chinese Patent Application No. 2008101701751.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656414