Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21134
Reexamination Certificate
active
07998845
ABSTRACT:
To provide a semiconductor device in which a semiconductor film having a leveled main surface is used as an active layer. A semiconductor film (5) having the leveled main surface with an rms of less than 10 nm and a P-V value of less than 70 nm which each indicate a surface roughness is formed by crystallizing a silicon film (3) containing germanium in a concentration of several %, preferably 0.1 to 10 atoms % and irradiating the film with a laser light. In a case of performing a crystallization by use of a metal element for accelerating the crystallization. The semiconductor film high in an orientation rate of the crystal as well as in levelness is obtained.
REFERENCES:
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5828084 (1998-10-01), Noguchi et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5943560 (1999-08-01), Chang et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6093587 (2000-07-01), Ohtani
patent: 6107639 (2000-08-01), Yamazaki et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6160279 (2000-12-01), Zhang et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6388270 (2002-05-01), Yamazaki et al.
patent: 6399454 (2002-06-01), Yamazaki
patent: 6433363 (2002-08-01), Yamazaki et al.
patent: 6444390 (2002-09-01), Yamazaki et al.
patent: 6444509 (2002-09-01), Noguchi et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6482684 (2002-11-01), Yamazaki
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6608326 (2003-08-01), Shinagawa et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 6638797 (2003-10-01), Noguchi et al.
patent: 6677222 (2004-01-01), Mishima et al.
patent: 6680223 (2004-01-01), Yamazaki et al.
patent: 6690068 (2004-02-01), Yamazaki et al.
patent: 6703265 (2004-03-01), Asami et al.
patent: 6706568 (2004-03-01), Nakajima
patent: 6759677 (2004-07-01), Yamazaki et al.
patent: 6764928 (2004-07-01), Ohtani
patent: 6787407 (2004-09-01), Nakamura et al.
patent: 6787807 (2004-09-01), Yamazaki et al.
patent: 6821827 (2004-11-01), Nakamura et al.
patent: 6828179 (2004-12-01), Yamazaki et al.
patent: 6828587 (2004-12-01), Yamazaki et al.
patent: 6855584 (2005-02-01), Yamazaki et al.
patent: 6924506 (2005-08-01), Zhang et al.
patent: 6924528 (2005-08-01), Yamazaki et al.
patent: 6962837 (2005-11-01), Yamazaki
patent: 7129120 (2006-10-01), Yamazaki
patent: 7153729 (2006-12-01), Yamazaki et al.
patent: 7186600 (2007-03-01), Ohtani et al.
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2003/0071307 (2003-04-01), Noguchi et al.
patent: 2003/0160239 (2003-08-01), Shinagawa et al.
patent: 2003/0207503 (2003-11-01), Yamazaki et al.
patent: 2005/0054181 (2005-03-01), Nakamura et al.
patent: 0 884 770 (1998-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-148428 (1996-06-01), None
patent: 08-213316 (1996-08-01), None
patent: 08-255916 (1996-10-01), None
patent: 11-031660 (1999-02-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-114173 (2000-04-01), None
patent: 2000-114527 (2000-04-01), None
patent: 2000-340503 (2000-12-01), None
patent: 2001-023899 (2001-01-01), None
patent: 2001-035787 (2001-02-01), None
patent: 2001-060551 (2001-03-01), None
patent: 2001-250777 (2001-09-01), None
patent: 96-36149 (1996-10-01), None
patent: 1999-030172 (1999-04-01), None
Office Action dated Jun. 17, 2005, Chinese Patent Office, Application No. 002131506.X.
Sze, S., “Physics of Semiconductor Devices,” John Wiley & Sons, New York 1981, Second Edition, p. 386.
Feller, W., “An Introduction to Probability Theory and its Applications,” vol. 1, Third Edition, John Wiley & Sons, New York, 1968, pp. 243-245.
Bozzo, S. et al., “Chemical Vapor Deposition of Silicon-Germanium Heterostructures,” Journal of Crystal-Growth, vol. 216, North Holland-Elsevier Publishing Company B.V., 2000, pp. 171-184.
Office Action (Korean Application No. 2002-0037876) dated Sep. 16, 2008.
Kasahara Kenji
Yamazaki Shunpei
Coleman W. David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2642288