Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1995-08-22

1998-10-20

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438181, 438602, H01L 21338

Patent

active

058245758

ABSTRACT:
After forming an n-type active layer, an n.sup.+ -type source region and an n.sup.+ -type drain region at predetermined regions of a GaAs substrate, a silicon oxide film and a silicon nitride film are deposited, and then source and drain electrodes are formed. By effecting overetching on the silicon nitride film using a resist mask formed on the silicon nitride film, an upper layer portion of the silicon oxide film at a gate electrode formation region is removed, and a carrier concentration at the active layer immediately under the gate electrode is reduced. This improves a gate/drain breakdown voltage. Thereafter, a lower layer portion of the silicon oxide film at the gate formation region is removed by wet etching, and the gate electrode is formed at this removed region. A drain breakdown voltage is improved owing to reduction of the carrier concentration only at the surface region of the active layer immediately under the gate electrode.

REFERENCES:
patent: 4668335 (1987-05-01), Mockler et al.
patent: 4694564 (1987-09-01), Enoki et al.
patent: 5143856 (1992-09-01), Iwasaki
patent: 5453403 (1995-09-01), Meng et al.
patent: 5496779 (1996-03-01), Lee et al.

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