Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-06-23

1999-08-31

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438622, 438926, H01L 21338

Patent

active

059465638

ABSTRACT:
There are provided: an isolation protruding upward from a semiconductor substrate in an active region; a gate electrode formed in the active region; and a pair of dummy electrodes formed to extend over the active region and the isolation and substantially in parallel with the gate electrode. Each of the gate electrode and dummy electrodes is composed of a lower film and an upper film. The lower films of the dummy electrodes are formed flush with the isolation and in contact with the side edges of the isolation. With the dummy electrodes, any gate electrode can be formed in a line-and-space pattern, so that the finished sizes of the gate electrode become uniform. This enables a reduction in gate length and therefore provides a semiconductor device of higher integration which is operable at a higher speed and substantially free from variations in finished size resulting from the use of different gate patterns.

REFERENCES:
patent: 4902646 (1990-02-01), Nakano
patent: 5225704 (1993-07-01), Wakamiya et al.
patent: 5278105 (1994-01-01), Eden et al.
patent: 5281555 (1994-01-01), Cho
patent: 5410161 (1995-04-01), Narita
patent: 5441915 (1995-08-01), Lee
patent: 5441916 (1995-08-01), Motonami

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