Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-08-26
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257304, 257301, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
056613202
ABSTRACT:
In method of manufacturing a DRAM by using a laminate SOI technique, which makes it possible to form a thin semiconductor film of a uniform thickness, the method includes steps of forming a step portion on a major surface of a silicon substrate, forming an insulating film on the major surface of the silicon substrate, forming a capacitor which is connected to the step potion through a contact hole formed through the insulating film on the step portion, grinding the silicon substrate from the other major surface thereof after a support substrate is laminated onto the silicon substrate to remain the step portion, forming a thin silicon film on the insulating film by lateral epitaxial growth process based on the silicon of the remaining step portion serving as a seed for the lateral epitaxial growth, and forming a MOS transistor in the thin silicon film.
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Meier Stephen
Sony Corporation
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