Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-05-16

1998-05-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 67, 257 74, H01L 2976

Patent

active

057570477

ABSTRACT:
A semiconductor device having the high integration and great driving ability is provided. An upper gate oxide film is formed on a gate electrode. An upper drain region is formed on a lower drain region through an oxide film, and an upper source region is formed on a lower source region through the oxide film. A polysilicon region is formed on the upper gate oxide film provided between the upper drain region and the upper source region. The lower layer portion of the polysilicon region is defined as a channel region.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964526