Semiconductor device and method of manufacturing such a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S347000

Reexamination Certificate

active

06885058

ABSTRACT:
A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11, 25). The gate dielectric (11, 25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure.

REFERENCES:
patent: 5162884 (1992-11-01), Liou et al.
patent: 5429969 (1995-07-01), Chang
patent: 5494838 (1996-02-01), Chang et al.
patent: 5607871 (1997-03-01), Han
patent: 6489650 (2002-12-01), Kumazaki

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