Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-04
1999-09-28
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, 438290, 438298, H01L 2976
Patent
active
059593300
ABSTRACT:
After a field oxide film is formed on a P-type semiconductor substrate, ion implantation of boron is carried out with respect to a whole surface of the substrate so that a channel stopper layer is formed. Then, a MOS FET is formed in an active region of the semiconductor substrate. Subsequently, ion implantation of phosphorus is carried out, by using a gate electrode of the MOS FET and the field oxide film as a mask, so that impurity layers which have the same type of conductivity as that of the channel stopper layer and has a concentration lower than that of the channel stopper layer are formed right under the source/drain regions of the MOS FET between the source/drain regions and the channel stopper layer.
REFERENCES:
patent: 5623154 (1997-04-01), Murakami et al.
Adan Alberto Oscar
Ohmi Toshinori
Tokuyama Norihiro
Monin Donald
Sharp Kabushiki Kaisha
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