Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2007-12-03

2010-12-14

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S412000, C438S724000, C257SE21345, C257SE21413, C257SE21415

Reexamination Certificate

active

07851277

ABSTRACT:
An object is to reduce the adverse influence which a portion of a gate insulating layer where the thickness has decreased, that is, a step portion, has on semiconductor element characteristics so that the reliability of the semiconductor element is improved. A semiconductor layer is formed over an insulating surface; a side surface of the semiconductor layer is oxidized using wet oxidation to form a first insulating layer; a second insulating layer is formed over the semiconductor layer and the first insulating layer; and a gate electrode is formed over the semiconductor layer and the first insulating layer with the second insulating layer interposed therebetween.

REFERENCES:
patent: 5650339 (1997-07-01), Saito et al.
patent: 5652453 (1997-07-01), Iwamatsu et al.
patent: 5725753 (1998-03-01), Harada et al.
patent: 5773330 (1998-06-01), Park
patent: 6030873 (2000-02-01), Iwamatsu et al.
patent: 6087698 (2000-07-01), Saito et al.
patent: 6104065 (2000-08-01), Park
patent: 6118151 (2000-09-01), Tsutsu
patent: 6124153 (2000-09-01), Lee et al.
patent: 6221788 (2001-04-01), Kobayashi et al.
patent: 6228692 (2001-05-01), Tsutsu
patent: 6388291 (2002-05-01), Zhang et al.
patent: 6433361 (2002-08-01), Zhang et al.
patent: 6555843 (2003-04-01), Yamazaki et al.
patent: 6876039 (2005-04-01), Okihara
patent: 2005/0116305 (2005-06-01), Hwang et al.
patent: 2005/0224796 (2005-10-01), Zhang et al.
patent: 2006/0086934 (2006-04-01), Iwamatsu et al.
patent: 0 532 314 (1993-03-01), None
patent: 1 536 482 (2005-06-01), None
patent: 59-150469 (1984-08-01), None
patent: 5-29625 (1993-02-01), None
patent: 5-175506 (1993-07-01), None
patent: 7-176753 (1995-07-01), None
patent: 7-321323 (1995-12-01), None
patent: 8-18055 (1996-01-01), None
patent: 8-213494 (1996-08-01), None
patent: 8-335702 (1996-12-01), None
patent: 9-17765 (1997-01-01), None
patent: 9-23010 (1997-01-01), None
patent: 9-36380 (1997-02-01), None
patent: 9-45679 (1997-02-01), None
patent: 11-258636 (1999-09-01), None
patent: 2002-76345 (2002-03-01), None
patent: 2003-203925 (2003-07-01), None
patent: 2005-19859 (2005-01-01), None
patent: 2005-167207 (2005-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4205533