Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2007-03-23

2010-06-01

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE21680, C257SE29300, C257SE29304, C257SE29309

Reexamination Certificate

active

07728379

ABSTRACT:
A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.

REFERENCES:
patent: 2006/0145237 (2006-07-01), Kim et al.
patent: 2006/0198190 (2006-09-01), Lue
patent: 2006/0237771 (2006-10-01), Forbes et al.
patent: 2007/0132010 (2007-06-01), Bhattacharyya
patent: 2002-261097 (2002-09-01), None

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